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Personal Details
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| Name | Dr Abhishek Ray |
| Designation | Assistant Professor – On Contract |
| Department | Electronics and Communication Engineering, School of Technology |
| Email | Abhishek.Ray_ad@sot.pdpu.ac.in |
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Educational Qualifications
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| B.E. (Electronics and Telecommunication, Government Engineering College, Bilaspur), 2015 |
| M.Tech. (VLSI Design and Embedded System, National Institute of Technology, raipur), 2019 |
| Ph.D (Electronics and Communication(Semiconductor Devices), National Institute of Technology, raipur), 2024 |
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Professional Affiliation
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Awards
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Publications / Articles / Conference
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| Published Papers in Journals |
| 'Improved post-radiation behavior of FinFET based CMOS with workfunction modulated gate', Physica Scripta, pp. 045031-045042, Mar 2024, DOI : 10.1088/1402-4896/ad3386 |
| 'TID response of hybrid FinFET with modified gate dielectric', Micro and Nanostructures, pp. 207759-207769, Mar 2024, DOI : https://doi.org/10.1016/j.micrna.2024.207759 |
| 'Total ionizing dose effect of bulk and SOI P-FinFET with linear workfunction modulation technology', Microelectronics Journal, pp. 105822-105828, Jul 2023, DOI : https://doi.org/10.1016/j.mejo.2023.105822 |
| 'Analysis of total ionizing dose response of optimized fin geometry workfunction modulated SOI-FinFET', Microelectronics Reliability, pp. 114549-114558, Jul 2022, DOI : https://doi.org/10.1016/j.microrel.2022.114549 |
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| Full Papers in Conference Proceedings |
| 'Influence of total ionizing dose on LWM Bulk and SOI p-FinFET', 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON), pp. 421-425, Nov 2022, DOI : 978-1-6654-7205-0 |
| 'Study of Gate Workfunction Modulated FinFET with Effect of TID', MEDCOM 2021, pp. 253-259, Oct 2021, DOI : https://doi.org/10.1007/978-981-19-6383-4_20 |
| 'Influence of SET effects in low-doped double gate MOSFETs', 5NANO 2020, pp. 3867-3873, Jul 2020, DOI : https://doi.org/10.1016/j.matpr.2020.12.1179 |
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